검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3% Luong GV, Knoll L, Blaeser S, Suess MJ, Sigg H, Schafer A, Trellenkamp S, Bourdelle KK, Buca D, Zhao QT, Mantl S Solid-State Electronics, 108, 19, 2015 |
| 2 |
Experimental demonstration of improved analog device performance of nanowire-TFETs Schulte-Braucks C, Richter S, Knoll L, Selmi L, Zhao QT, Mantl S Solid-State Electronics, 113, 179, 2015 |
| 3 |
Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm Knoll L, Richter S, Nichau A, Trellenkamp S, Schafer A, Bourdelle KK, Hartmann JM, Zhao QT, Mantl S Solid-State Electronics, 97, 76, 2014 |
| 4 |
Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics Knoll L, Richter S, Nichau A, Trellenkamp S, Schafer A, Wirths S, Blaeser S, Buca D, Bourdelle KK, Zhao QT, Mantl S Solid-State Electronics, 98, 32, 2014 |
| 5 |
Silicon-germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions Richter S, Blaeser S, Knoll L, Trellenkamp S, Fox A, Schafer A, Hartmann JM, Zhao QT, Mantl S Solid-State Electronics, 98, 75, 2014 |
| 6 |
Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped NiSi2 tunnel junctions Knoll L, Schmidt M, Zhao QT, Trellenkamp S, Schafer A, Bourdelle KK, Mantl S Solid-State Electronics, 84, 211, 2013 |
| 7 |
LaLuO3 higher-kappa dielectric integration in SOI MOSFETs with a gate-first process Nichau A, Ozben ED, Schnee M, Lopes JMJ, Besmehn A, Luysberg M, Knoll L, Habicht S, Mussmann V, Luptak R, Lenk S, Rubio-Zuazo J, Castro GR, Buca D, Zhao QT, Schubert J, Mantl S Solid-State Electronics, 71, 19, 2012 |
| 8 |
20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain Knoll L, Zhao QT, Luptak R, Trellenkamp S, Bourdelle KK, Mantl S Solid-State Electronics, 71, 88, 2012 |
| 9 |
Study of Arsenic ion implantation of patterned strained Si NWs Minamisawa RA, Habicht S, Knoll L, Zhao QT, Buca D, Mantl S, Kohler F, Carius R Solid-State Electronics, 60(1), 31, 2011 |
| 10 |
Relaxation dynamics of deuterated formyl and isoformyl cations Wester R, Hechtfischer U, Knoll L, Lange M, Levin J, Scheffel M, Schwalm D, Wolf A, Baer A, Vager Z, Zajfman D, Mladenovic M, Schmatz S Journal of Chemical Physics, 116(16), 7000, 2002 |