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| No. | Article |
|---|---|
| 1 |
Measurement of Shallow Arsenic Impurity Profiles in Semiconductor Silicon Using Time-of-Flight Secondary-Ion Mass-Spectrometry and Total-Reflection X-Ray-Fluorescence Spectrometry Schwenke H, Knoth J, Fabry L, Pahlke S, Scholz R, Frey L Journal of the Electrochemical Society, 144(11), 3979, 1997 |