화학공학소재연구정보센터
검색결과 : 32건
No. Article
1 Phase degradation in BxGa1-xN films grown at low temperature by metalorganic vapor phase epitaxy
Gunning BP, Moseley MW, Koleske DD, Allerman AA, Lee SR
Journal of Crystal Growth, 464, 190, 2017
2 Photoelectrochemical etching of epitaxial InGaN thin films: self-limited kinetics and nanostructuring
Xiao XY, Fischer AJ, Coltrin ME, Lu P, Koleske DD, Wang GT, Polsky R, Tsao JY
Electrochimica Acta, 162, 163, 2015
3 On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers
Koleske DD, Fischer AJ, Bryant BN, Kotula PG, Wierer JJ
Journal of Crystal Growth, 415, 57, 2015
4 Controlling indium incorporation in InGaN barriers with dilute hydrogen flows
Koleske DD, Wierer JJ, Fischer AJ, Lee SR
Journal of Crystal Growth, 390, 38, 2014
5 Connection between GaN and InGaN growth mechanisms and surface morphology
Koleske DD, Lee SR, Crawford MH, Cross KC, Coltrin ME, Kempisty JM
Journal of Crystal Growth, 391, 85, 2014
6 Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells
Lee SR, Koleske DD, Crawford MH, Wierer JJ
Journal of Crystal Growth, 355(1), 63, 2012
7 Log-Pile TiO2 Photonic Crystal for Light Control at Near-UV and Visible Wavelengths
Subramania G, Lee YJ, Fischer AJ, Koleske DD
Advanced Materials, 22(4), 487, 2010
8 Thermal stability of thin InGaN films on GaN
Thaler GT, Koleske DD, Lee SR, Bogart KHA, Crawford MH
Journal of Crystal Growth, 312(11), 1817, 2010
9 Pyrolysis of two-dimensional and three-dimensional interferometrically patterned resist structures
Burckel DB, Washburn CM, Koleske DD, Polsky R
Journal of Vacuum Science & Technology B, 28(6), C6P14, 2010
10 Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control
Creighton JR, Breiland WG, Koleske DD, Thaler G, Crawford MH
Journal of Crystal Growth, 310(6), 1062, 2008