화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Journal of Crystal Growth, 248, 503, 2003
2 MOVPE growth and characterization of Al1-xInxN/GaN multiple layers
Kosaki M, Mochizuki S, Nakamura T, Watanabe Y, Yukawa Y, Nitta S, Yamaguchi S, Amano H, Akasaki I
Journal of Crystal Growth, 237, 968, 2002
3 Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N-2 carrier gas
Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H, Akasaki I
Journal of Crystal Growth, 221, 327, 2000