검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Suppression of Si cavities at the SiC/Si interface during epitaxial growth of 3C-SiC on silicon-on-insulator Moller H, Krotz G, Eickhoff M, Nielsen A, Papaioannou V, Stoemenos J Journal of the Electrochemical Society, 148(1), G16, 2001 |
| 2 |
Oxidation dependence on defect density in 3C-SiC films Eickhoff M, Vouroutzis N, Nielsen A, Krotz G, Stoemenos J Journal of the Electrochemical Society, 148(6), G336, 2001 |
| 3 |
Improvement of the 3C-SiC/Si interface by flash lamp annealing Panknin D, Stoemenos J, Eickhoff M, Heera V, Vouroutzis N, Krotz G, Skorupa W Materials Science Forum, 353-356, 151, 2001 |
| 4 |
Selective deposition of 3C-SiC epitaxially grown on SOI subtrates Eickhoff M, Zappe S, Nielsen A, Krotz G, Obermeier E, Vouroutzis N, Stoemenos J Materials Science Forum, 353-356, 175, 2001 |
| 5 |
Dependence of wet oxidation on the defect density in 3C-SiC Eickhoff M, Vouroutzis N, Nielsen A, Krotz G, Stoemenos J Materials Science Forum, 353-356, 663, 2001 |
| 6 |
High temperature 10 bar pressure sensor based on 3C-SiC/SOI for turbine control applications Zappe S, Franklin J, Obermeier E, Eickhoff M, Moller H, Krotz G, Rougeot C, Lefort O, Stoemenos J Materials Science Forum, 353-356, 753, 2001 |
| 7 |
SOL thinning effects on 3C-SiC on SOI Planes N, Moller H, Camassel J, Stoemenos Y, Falkovski L, Eickhoff M, Krotz G Materials Science Forum, 338-3, 301, 2000 |
| 8 |
Structural characteristics of 3C-SiC films epitaxially grown on the Si/Si3N4/SiO2 system Zappe S, Moller H, Krotz G, Eickhoff M, Skorupa W, Obermeier E, Stoemenos J Materials Science Forum, 338-3, 529, 2000 |