검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H-2 and Ar environment Minami K, Moriya A, Yuasa K, Maeda K, Yamada M, Kunii Y, Niwano M, Murota J Solid-State Electronics, 110, 40, 2015 |
| 2 |
Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system Yokogawa T, Ishibashi K, Sakuraba M, Murota J, Inokuchi Y, Kunii Y, Kurokawa H Applied Surface Science, 254(19), 6090, 2008 |
| 3 |
Si epitaxial growth on self-limitedly B adsorbed Si(1-x)Ge(x)(100) by ultraclean low-pressure CVD system Ishibashi K, Sakuraba M, Murota J, Inokuchi Y, Kunii Y, Kurokawa H Thin Solid Films, 517(1), 229, 2008 |
| 4 |
In situ B doping of SiGe(C) using BCl3 in ultraclean hot-wall LPCVD Kunii Y, Inokuchi Y, Moriya A, Kurokawa H, Murota J Applied Surface Science, 224(1-4), 68, 2004 |
| 5 |
Wet Etching of Doped and Nondoped Silicon-Oxide Films Using Buffered Hydrogen-Fluoride Solution Kunii Y, Nakayama S, Maeda M Journal of the Electrochemical Society, 142(10), 3510, 1995 |