| 1 |
Improved leakage current properties of ZrO2/(Ta/Nb)O-x-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors
Onaya T, Nabatame T, Sawada T, Kurishima K, Sawamoto N, Ohi A, Chikyow T, Ogura A
Thin Solid Films, 655, 48, 2018 |
| 2 |
MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-ln/Sb content for very low turn-on-voltage InP-based DHBTs (vol 404, pg 172, 2014)
Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H
Journal of Crystal Growth, 424, 80, 2015 |
| 3 |
Impact of strained GaAs spacer between InP emitter and GaAs1-ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1-ySby/InP DHBTs
Hoshi T, Hashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M
Journal of Crystal Growth, 395, 31, 2014 |
| 4 |
MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs
Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H
Journal of Crystal Growth, 404, 172, 2014 |
| 5 |
Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition
Hoshi T, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Tateno K
Journal of Crystal Growth, 380, 197, 2013 |
| 6 |
C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE
Oda Y, Watanabe N, Uchida M, Kurishima K, Kobayashi T
Journal of Crystal Growth, 272(1-4), 700, 2004 |
