화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
da Silva MJ, Quivy AA, Martini S, Lamas TE, da Silva ECF, Leite JR
Journal of Crystal Growth, 278(1-4), 103, 2005
2 Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K
Journal of Crystal Growth, 284(3-4), 379, 2005
3 Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant
Lamas TE, Quivy AA, Martini S, da Silva MJ, Leite JR
Thin Solid Films, 474(1-2), 25, 2005
4 Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Martini S, Quivy AA, Lamas TE, da Silva MJ, da Silva ECF, Leite JR
Journal of Crystal Growth, 251(1-4), 101, 2003
5 Optical response at 1.3 mu m and 1.5 mu m with InAs quantum dots embedded in a pure GaAs matrix
da Silva MJ, Quivy AA, Martini S, Lamas TE, da Silva ECF, Leite JR
Journal of Crystal Growth, 251(1-4), 181, 2003
6 Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K
Journal of Crystal Growth, 252(1-3), 208, 2003
7 Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle
da Silva MJ, Quivy AA, Gonzalez-Borrero PP, Marega E, Leite JR
Journal of Crystal Growth, 241(1-2), 19, 2002
8 MBE growth of cubic AlyGa1-yN/GaN heterostructures structural, vibrational and optical properties
As DJ, Frey T, Bartels M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR
Journal of Crystal Growth, 230(3-4), 421, 2001
9 Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
Fernandez JRL, Araujo CM, da Silva AF, Leite JR, Sernelius BE, Tabata A, Abramof E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K
Journal of Crystal Growth, 231(3), 420, 2001
10 Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
Martini S, Quivy AA, Tabata A, Leite JR
Journal of Vacuum Science & Technology B, 18(4), 1991, 2000