화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation
Loo R, Wang G, Orzali T, Waldron N, Merckling C, Leys MR, Richard O, Bender H, Eyben P, Vandervorst W, Caymax M
Journal of the Electrochemical Society, 159(3), H260, 2012
2 Growth of high quality InP layers in STI trenches on miscut Si (001) substrates
Wang G, Leys MR, Nguyen ND, Loo R, Brammertz G, Richard O, Bender H, Dekoster J, Meuris M, Heyns MM, Caymax M
Journal of Crystal Growth, 315(1), 32, 2011
3 Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates
Wang G, Leys MR, Nguyen ND, Loo R, Brammertz G, Richard O, Bender H, Dekoster J, Meuris M, Heyns MM, Caymax M
Journal of the Electrochemical Society, 157(11), H1023, 2010
4 Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells
Mols Y, Leys MR, Simons E, Poortmans J, Borghs G
Journal of Crystal Growth, 298, 758, 2007
5 Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC
Boeykens S, Leys MR, Germain M, Belmans R, Borghs G
Journal of Crystal Growth, 272(1-4), 312, 2004
6 Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
Jacobs K, Van Daele B, Leys MR, Moerman I, Van Tendeloo G
Journal of Crystal Growth, 248, 498, 2003
7 Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE
Leys MR
Journal of Crystal Growth, 209(2-3), 225, 2000
8 Heterogeneous Hydride Pyrolysis in a Chemical Beam Epitaxy Cracker Cell and Growth of High-Quality InP
Rongen RT, Leys MR, Vanhall PJ, Vonk H, Wolter JH
Journal of Vacuum Science & Technology A, 15(1), 29, 1997