화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC
Suvanam SS, Usman M, Martin D, Yazdi MG, Linnarsson M, Tempez A, Gotelid M, Hallen A
Applied Surface Science, 433, 108, 2018
2 Cubic silicon carbide as a potential photovoltaic material
Syvajarvi M, Ma QB, Jokubavicius V, Galeckas A, Sun JW, Liu XY, Jansson M, Wellmann P, Linnarsson M, Runde P, Johansen BA, Thogersen A, Diplas S, Carvalho PA, Lovvik OM, Wright DN, Azarov AY, Svensson BG
Solar Energy Materials and Solar Cells, 145, 104, 2016
3 Carrier concentrations in implanted and epitaxial 4H-SiC by scanning spreading resistance microscopy
Osterman J, Anand S, Linnarsson M, Hallen A
Materials Science Forum, 389-3, 663, 2002
4 The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures
Uneus L, Nakagomi S, Linnarsson M, Janson MS, Svensson BG, Yakimova R, Syvajarvi M, Henry A, Janzen E, Ekedahl LG, Lunstrom I, Spetz AL
Materials Science Forum, 389-3, 1419, 2002
5 Damage reduction in channeled ion implanted 6H-SiC
Morvan E, Mestres N, Campos FJ, Pascual J, Hallen A, Linnarsson M, Kuznetsov AY
Materials Science Forum, 338-3, 893, 2000