검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Thin film embedded memory solutions Mazoyer P, Puget S, Bossu G, Masson P, Lorenzini P, Portal JM Current Applied Physics, 10(1), E9, 2010 |
| 2 |
Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE Cordier Y, Semond F, Massies J, Leroux M, Lorenzini P, Chaix C Journal of Crystal Growth, 301, 434, 2007 |
| 3 |
Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire Aggerstam T, Lourdudoss S, Radamson HH, Sjodin M, Lorenzini P, Look DC Thin Solid Films, 515(2), 705, 2006 |
| 4 |
Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates Cordier Y, Hugues M, Semond F, Natali F, Lorenzini P, Bougrioua Z, Massies J, Frayssinet E, Beaumont B, Gibart P, Faurie JP Journal of Crystal Growth, 278(1-4), 383, 2005 |
| 5 |
AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111) Cordier Y, Semond F, Hugues M, Natali F, Lorenzini P, Haas H, Chenot S, Laugt M, Tottereau O, Vennegues P, Massies J Journal of Crystal Growth, 278(1-4), 393, 2005 |
| 6 |
Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes Tinjod F, de Mierry P, Lancefield D, Bougrioua Z, Laugt S, Tottereau O, Lorenzini P, Chenot S, Virey E, Kokta MR, Stone-Sundberg JL, Pauwels D Journal of Crystal Growth, 285(4), 450, 2005 |
| 7 |
MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances Cordier Y, Semond F, Lorenzini P, Grandjean N, Natali F, Damilano B, Massies J, Hoel V, Minko A, Vellas N, Gaquiere C, DeJaeger JC, Dessertene B, Cassette S, Surrugue M, Adam D, Grattepain JC, Aubry R, Delage SL Journal of Crystal Growth, 251(1-4), 811, 2003 |
| 8 |
Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs Cordier Y, Lorenzini P, Chauveau JM, Ferre D, Androussi Y, DiPersio J, Vignaud D, Codron JL Journal of Crystal Growth, 251(1-4), 822, 2003 |
| 9 |
Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111) Lahreche H, Vennegues P, Tottereau O, Laugt M, Lorenzini P, Leroux M, Beaumont B, Gibart P Journal of Crystal Growth, 217(1-2), 13, 2000 |