검색결과 : 36건
| No. | Article |
|---|---|
| 1 |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum Lin KY, Wan HW, Chen KHM, Fanchiang YT, Chen WS, Lin YH, Cheng YT, Chen CC, Lin HY, Young LB, Cheng CP, Pi TW, Kwo J, Hong M Journal of Crystal Growth, 512, 223, 2019 |
| 2 |
Controllable growth of stable germanium dioxide ultra-thin layer by means of capacitively driven radio frequency discharge Svarnas P, Botzakaki MA, Skoulatakis G, Kennou S, Ladas S, Tsamis C, Georga SN, Krontiras CA Thin Solid Films, 599, 49, 2016 |
| 3 |
Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates Tseng PH, Hwu JG Solid-State Electronics, 91, 100, 2014 |
| 4 |
Explicit drain current model of junctionless double-gate field-effect transistors Yesayan A, Pregaldiny F, Sallese JM Solid-State Electronics, 89, 134, 2013 |
| 5 |
Drain-extended MOS transistors capable for operation at 10 V and at radio frequencies Mai A, Rucker H Solid-State Electronics, 65-66, 45, 2011 |
| 6 |
Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs Crespo-Yepes A, Martin-Martinez J, Rothschild A, Rodriguez R, Nafria M, Aymerich X Solid-State Electronics, 65-66, 157, 2011 |
| 7 |
Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates Lucovsky G, Lee S, Long JP, Seo H, Luning J Applied Surface Science, 254(23), 7933, 2008 |
| 8 |
High injection regime of the super barrier (TM) rectifier Rodov V, Ankudinov AL, Ghosh P Solid-State Electronics, 51(5), 714, 2007 |
| 9 |
Dose radiation effects in FinFETs Wu XS, Chan PCH, Orozco A, Vazquez A, Chaudhry A, Colinge JP Solid-State Electronics, 50(2), 287, 2006 |
| 10 |
Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs Tsuchiya T, Sakuraba M, Murota J Thin Solid Films, 508(1-2), 326, 2006 |