| 1 |
Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances
Rahhal L, Bajolet A, Cros A, Diouf C, Kergomard F, Rosa J, Bidal G, Bianchi RA, Ghibaudo G
Solid-State Electronics, 85, 15, 2013 |
| 2 |
Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs
Aleksic SM, Jaksic AB, Pejovic MM
Solid-State Electronics, 52(8), 1197, 2008 |
| 3 |
DC characterization of accumulation layer and bulk layer electron mobility in 4H-SiC depletion mode MOSFET
Zhao P, Rusli, Zhu CL, Xia JH
Solid-State Electronics, 51(8), 1139, 2007 |
| 4 |
A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors
Kuntman A, Ardali A, Kuntman H, Kacar F
Solid-State Electronics, 48(2), 217, 2004 |
| 5 |
Noise as a diagnostic tool for semiconductor material and device characterization
Claeys C, Simoen E
Journal of the Electrochemical Society, 145(6), 2058, 1998 |
| 6 |
Time-Dependent Dielectric-Breakdown Measurements on Rpecvd and Thermal Oxides
Silvestre C, Hauser JR
Thin Solid Films, 277(1-2), 101, 1996 |
| 7 |
Time-Dependent Dielectric-Breakdown Measurements on Rpecvd and Thermal Oxides
Silvestre C, Hauser JR
Journal of the Electrochemical Society, 142(11), 3881, 1995 |
| 8 |
The Perspectives of Silicon-on-Insulator Technologies for Cryogenic Applications
Claeys C, Simoen E
Journal of the Electrochemical Society, 141(9), 2522, 1994 |
