화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy
Senichev A, Nguyen T, Diaz RE, Dzuba B, Shirazi-HD M, Cao Y, Manfra MJ, Malis O
Journal of Crystal Growth, 500, 52, 2018
2 In0.68Ga0.32As/Al0.64In0.36As/InP 4.5 mu m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy
Chen J, Malis O, Sergent AM, Sivco DL, Weimann N, Cho AY
Journal of Vacuum Science & Technology B, 25(3), 913, 2007
3 MBE development of dilute nitrides for commercial long-wavelength laser applications
Malis O, Liu WK, Gmachl C, Fastenau JM, Joel A, Gong P, Bland SW, Moshegov N
Journal of Crystal Growth, 251(1-4), 432, 2003
4 Conductivity of RF-Sputtered Ni-100-X-Si-X Thin-Films with 33-Less-Than-or-Equal-to-X-Less-Than-or-Equal-to-77 at.Percent
Belumarian A, Serbanescu MD, Manaila R, Ivanov E, Malis O, Devenyi A
Thin Solid Films, 259(1), 105, 1995