검색결과 : 4건
No. | Article |
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1 |
Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy Senichev A, Nguyen T, Diaz RE, Dzuba B, Shirazi-HD M, Cao Y, Manfra MJ, Malis O Journal of Crystal Growth, 500, 52, 2018 |
2 |
In0.68Ga0.32As/Al0.64In0.36As/InP 4.5 mu m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy Chen J, Malis O, Sergent AM, Sivco DL, Weimann N, Cho AY Journal of Vacuum Science & Technology B, 25(3), 913, 2007 |
3 |
MBE development of dilute nitrides for commercial long-wavelength laser applications Malis O, Liu WK, Gmachl C, Fastenau JM, Joel A, Gong P, Bland SW, Moshegov N Journal of Crystal Growth, 251(1-4), 432, 2003 |
4 |
Conductivity of RF-Sputtered Ni-100-X-Si-X Thin-Films with 33-Less-Than-or-Equal-to-X-Less-Than-or-Equal-to-77 at.Percent Belumarian A, Serbanescu MD, Manaila R, Ivanov E, Malis O, Devenyi A Thin Solid Films, 259(1), 105, 1995 |