| 1 |
In situ control and monitoring of doped and compositionally graded SiGe films using spectroscopic ellipsometry and second harmonic generation
Mantese L, Selinidis K, Wilson PT, Lim D, Jiang YY, Ekerdt JG, Downer MC
Applied Surface Science, 154, 229, 2000 |
| 2 |
Surface-induced optical anisotropy of Si and Ge
Rossow U, Mantese L, Aspnes DE
Journal of Vacuum Science & Technology B, 18(4), 2229, 2000 |
| 3 |
Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy
Mantese L, Xue QK, Sakurai T, Aspnes DE
Journal of Vacuum Science & Technology A, 17(4), 1652, 1999 |
| 4 |
Photon-induced localization and final-state correlation effects in optically absorbing materials
Aspnes DE, Mantese L, Bell KA, Rossow U
Journal of Vacuum Science & Technology B, 16(4), 2367, 1998 |
| 5 |
Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometry
Bell KA, Mantese L, Rossow U, Aspnes DE
Thin Solid Films, 313-314, 161, 1998 |
| 6 |
Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states
Mantese L, Bell KA, Rossow U, Aspnes DE
Thin Solid Films, 313-314, 557, 1998 |
| 7 |
Evidence of Near-Surface Localization of Excited Electronic States in Crystalline Si
Mantese L, Bell KA, Rossow U, Aspnes DE
Journal of Vacuum Science & Technology B, 15(4), 1196, 1997 |
| 8 |
Surface and Interface Effects on Ellipsometric Spectra of Crystalline Si
Bell KA, Mantese L, Rossow U, Aspnes DE
Journal of Vacuum Science & Technology B, 15(4), 1205, 1997 |
| 9 |
Interpretation of Surface-Induced Optical Anisotropy of Clean, Hydrogenated, and Oxidized Vicinal Silicon Surfaces Investigated by Reflectance-Difference Spectroscopy
Rossow U, Mantese L, Aspnes DE
Journal of Vacuum Science & Technology B, 14(4), 3070, 1996 |
