검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Doping profile extraction in thin SOI films: Application to A2RAM Wakam FT, Lacord J, Bawedin M, Martinie S, Cristoloveanu S, Ghibaudo G, Barbe JC Solid-State Electronics, 159, 3, 2019 |
| 2 |
New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures Llorente CD, Colinge JP, Martinie S, Cristoloveanu S, Wan J, Le Royer C, Ghibaudo G, Vinet M Solid-State Electronics, 159, 26, 2019 |
| 3 |
New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube (TM) integration Llorente CD, Le Royer C, Batude P, Fenouillet-Beranger C, Martinie S, Lu CMV, Allain F, Colinge JP, Cristoloveanu S, Ghibaudo G, Vinet M Solid-State Electronics, 144, 78, 2018 |
| 4 |
A review of the Z(2)-FET 1T-DRAM memory: Operation mechanisms and key parameters Cristoloveanu S, Lee KH, Parihar MS, El Dirani H, Lacord J, Martinie S, Le Royer C, Barbe JC, Mescot X, Fonteneau P, Galy P, Gamiz F, Navarro C, Cheng B, Duan M, Adamu-Lema F, Asenov A, Taur Y, Xu Y, Kim YT, Wan J, Bawedin M Solid-State Electronics, 143, 10, 2018 |
| 5 |
Insight into carrier lifetime impact on band-modulation devices Parihar MS, Lee KH, Park HJ, Lacord J, Martinie S, Barbe JC, Xu Y, El Dirani H, Taur Y, Cristoloveanu S, Bawedin M Solid-State Electronics, 143, 41, 2018 |
| 6 |
Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations Navarro C, Barraud S, Martinie S, Lacord J, Jaud MA, Vinet M Solid-State Electronics, 128, 155, 2017 |
| 7 |
A comprehensive model on field-effect pnpn devices (Z(2)-FET) Taur Y, Lacord J, Parihar MS, Wan J, Martinie S, Lee K, Bawedin M, Barbe JC, Cristoloveanu S Solid-State Electronics, 134, 1, 2017 |
| 8 |
Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs Hutin L, Oeflein RP, Borrel J, Martinie S, Tabone C, Le Royer C, Vinet M Solid-State Electronics, 115, 160, 2016 |
| 9 |
Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm Le Royer C, Villalon A, Hutin L, Martinie S, Nguyen P, Barraud S, Glowacki F, Allain F, Bernier N, Cristoloveanu S, Vinet M Solid-State Electronics, 115, 167, 2016 |