검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
High-rate epitaxial growth of 4H-SiC using a vertical-type, quasi-hot-wall CVD reactor Masahara K, Takahashi T, Kushibe M, Ohno T, Nishio J, Kojima K, Ishida Y, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 179, 2002 |
| 2 |
Epitaxial growth of (1120) 4H-SiC using substrate grown in the [1120] direction Kojima K, Ohno T, Senzaki J, Fukuda K, Fujimoto T, Katsuno M, Ohtani N, Nishino J, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 195, 2002 |
| 3 |
Investigation of residual impurities in 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition Nishio J, Kushibe M, Masahara K, Kojima K, Ohno T, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 215, 2002 |
| 4 |
Simulation of high-temperature SiC epitaxial growth using vertical, quasi-hot-wall CVD reactor Hasegawa M, Miyauchi A, Masahara K, Ishida Y, Takahashi T, Ohno T, Nishio J, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 227, 2002 |
| 5 |
Replication of defects from 4H-SiC wafer to epitaxial layer Ohno T, Yamaguchi H, Kojima K, Nishio J, Masahara K, Ishida Y, Takahashi T, Suzuki T, Yoshida S Materials Science Forum, 389-3, 447, 2002 |
| 6 |
Distribution profile of deep levels in SiC observed by isothermal capacitance transient spectroscopy Fujimaki M, Ono R, Kushibe M, Masahara K, Kojima K, Shinohe T, Okushi H, Arai K Materials Science Forum, 389-3, 851, 2002 |
| 7 |
Influence of the crystalline quality of epitaxial layers on inversion channel mobility in 4H-SiC MOSFETs Kojima K, Ohno T, Suzuki S, Senzaki J, Harada S, Fukuda K, Kushibe M, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 1053, 2002 |
| 8 |
Control of surface morphologies for epitaxial growth on low off-anglie 4H-SiC (0001) substrates Masahara K, Kushibe M, Ohno H, Kojima K, Takahashi T, Ishida Y, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 353-356, 135, 2001 |
| 9 |
Competitive growth between deposition and etching in 4H-SiC CVD epitaxy using quasi-hot wail reactor Kushibe M, Ishida Y, Okumura H, Takahashi T, Masahara K, Ohno T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 338-3, 169, 2000 |
| 10 |
Pre-growth treatment of 4H-SiC substrates by hydrogen etching at low pressure Masahara K, Ishida Y, Okumura H, Takahashi T, Kushibe M, Ohno T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 338-3, 1037, 2000 |