검색결과 : 7건
No. | Article |
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1 |
Room temperature yellow InGaAlP quantum dot laser Ledentsov NN, Shchukin VA, Shernyakov YM, Kulagina MM, Payusov AS, Gordeev NY, Maximov MV, Zhukov AE, Karachinsky LY, Denneulin T, Cherkashin N Solid-State Electronics, 155, 129, 2019 |
2 |
MBE-grown metamorphic lasers for applications at telecom wavelengths Ledentsov NN, Shchukin VA, Kettler T, Posilovic K, Bimberg D, Karachinsky LY, Gladyshev AY, Maximov MV, Novikov II, Shernyakov YM, Zhukov AE, Ustinov VM, Kovsh AR Journal of Crystal Growth, 301, 914, 2007 |
3 |
MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section Blokhin SA, Karachinsky LY, Novikov II, Kuznetsov SM, Gordeev NY, Shernyakov YM, Savelyev AV, Maximov MV, Mutig A, Hopfer F, Kovsh AR, Mikhri SS, Krestnikov IL, Livshits DA, Ustinov VM, Shchukin VA, Ledentsov NN, Bimberg D Journal of Crystal Growth, 301, 945, 2007 |
4 |
High-power 1.3 mu m InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system Wilk A, Kovsh AR, Mikhrin SS, Chaix C, Novikov II, Maximov MV, Shernyakov YM, Ustinov VM, Ledentsov NN Journal of Crystal Growth, 278(1-4), 335, 2005 |
5 |
InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with enhanced optical gain Kovsh AR, Maleev NA, Zhukov AE, Mikhrin SS, Vasil'ev AP, Semenova EA, Shernyakov YM, Maximov MV, Livshits DA, Ustinov VM, Ledentsov NN, Bimberg D, Alferov ZI Journal of Crystal Growth, 251(1-4), 729, 2003 |
6 |
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy Ustinov VM, Zhukov AE, Maleev NA, Kovsh AR, Mikhrin SS, Volovik BV, Musikhin YG, Shernyakov YM, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D Journal of Crystal Growth, 227, 1155, 2001 |
7 |
Quantum dot lasers: breakthrough in optoelectronics Bimberg D, Grundmann M, Heinrichsdorff F, Ledentsov NN, Ustinov VM, Zhukov AE, Kovsh AR, Maximov MV, Shernyakov YM, Volovik BV, Tsatsul'nikov AF, Kop'ev PS, Alferov ZI Thin Solid Films, 367(1-2), 235, 2000 |