화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration
Fenouillet-Beranger C, Previtali B, Batude P, Nemouchi F, Casse M, Garros X, Tosti L, Rambal N, Lafond D, Dansas H, Pasini L, Brunet L, Deprat F, Gregoire M, Mellier M, Vinet M
Solid-State Electronics, 113, 2, 2015
2 Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology
Diokh T, Le-Roux E, Jeannot S, Cagli C, Jousseaume V, Nodin JF, Gros-Jean M, Gaumer C, Mellier M, Cluzel J, Carabasse C, Candelier P, De Salvo B
Thin Solid Films, 533, 24, 2013