| 1 |
Reduction in residual impurities in semi-polar (3 0 (3)over-bar (1)over-bar) and (2 0 (2)over-bar (1)over-bar) GaN grown by metalorganic vapor phase epitaxy
Yamada H, Chonan H, Yamada T, Shimizu M
Journal of Crystal Growth, 512, 119, 2019 |
| 2 |
Influence of trimethylaluminum predoses on the growth morphology, film-substrate interface, and microstructure of MOCVD-grown AlN on (111)Si
Lange AP, Mahajan S
Journal of Crystal Growth, 511, 106, 2019 |
| 3 |
Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD
Fujikawa S, Ishiguro T, Wang K, Terashima W, Fujishiro H, Hirayama H
Journal of Crystal Growth, 510, 47, 2019 |
| 4 |
Epitaxial lateral overgrowth of GaN on nano-cavity patterned sapphire substrates
Lee D, Lee S, Kim G, Kim J, Jang J, Oh J, Moon D, Park Y, Yoon E
Journal of Crystal Growth, 507, 103, 2019 |
| 5 |
Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization
Becerra DL, Cohen DA, Mehari S, DenBaars SP, Nakamura S
Journal of Crystal Growth, 507, 118, 2019 |
| 6 |
Influence of the growth conditions of LT-AlN on quality of HT-AlN growth on Si (111) by metalorganic chemical vapor deposition
Chernykh MY, Ezubchenko IS, Mayboroda IO, Zanaveskin ML
Journal of Crystal Growth, 507, 200, 2019 |
| 7 |
Characteristics of aluminum nitride films on hexagonal boron nitride buffer layers using various growth methods through metal organic chemical vapor deposition
Han M, Ryu BD, Ko KB, Jo CH, Lim CH, Cuong TV, Han N, Hong CH
Journal of Crystal Growth, 507, 316, 2019 |
| 8 |
Structural characteristics of m-plane AlN substrates and homoepitaxial films
Graziano MB, Bryan I, Bryan Z, Kirste R, Tweedie J, Collazo R, Sitar Z
Journal of Crystal Growth, 507, 389, 2019 |
| 9 |
Assessing epitaxial regrowth material quality on a micro-transfer printed GaAs substrate
Schmieder KJ, Lumb MP, Bennett MF, Haughn CR, Mack S, Yakes MK, Maximenko SI, Walters RJ
Journal of Crystal Growth, 507, 402, 2019 |
| 10 |
MOCVD growth of beta-FeSi2 film on modified Si surface by silver and enhancement of luminescence
Akiyama K, Nojima S, Takahashi R, Matsumoto Y, Funakubo H
Journal of Crystal Growth, 506, 131, 2019 |
