화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy
Albert S, Bengoechea-Encabo A, Sabido-Siller M, Mueller M, Schmidt G, Metzner S, Veit P, Bertram F, Sanchez-Garcia MA, Christen J, Calleja E
Journal of Crystal Growth, 392, 5, 2014
2 MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates
Ravash R, Dadgar A, Bertram F, Dempewolf A, Metzner S, Hempel T, Christen J, Krost A
Journal of Crystal Growth, 370, 288, 2013
3 Epitaxial lateral overgrowth of non-polar GaN(1 (1)over-bar 0 0) on Si(112) patterned substrates by MOCVD
Izyumskaya N, Liu SJ, Avrutin V, Ni XF, Wu M, Ozgur U, Metzner S, Bertram F, Christen J, Zhou L, Smith DJ, Morkoc H
Journal of Crystal Growth, 314(1), 129, 2011
4 Growth of InxGa1-xN/GaN QW structures with high indium concentration on c-plane and m-plane surfaces by MOVPE
Jonen H, Rossow U, Langer T, Drager A, Hoffmann L, Bremers H, Hangleiter A, Bertram F, Metzner S, Christen J
Journal of Crystal Growth, 310(23), 4987, 2008
5 Gene transfer of cyto-protective molecules in corneal endothelial cells and cultured corneas: Analysis of protective effects in vitro and in vivo
Gong N, Ecke I, Mergler S, Yang J, Metzner S, Schu S, Volk HD, Pleyer U, Ritter T
Biochemical and Biophysical Research Communications, 357(1), 302, 2007