화학공학소재연구정보센터
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No. Article
1 산화아연 나노막대가 내장된 아산화구리 박막 구조를 이용한 산화물 광양극 제작 및 광전기화학적 특성
민병국, 김효진
Korean Journal of Materials Research, 29(3), 196, 2019
2 High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors
Lee JM, Min BG, Ju CW, Ahn HK, Lim JW
Current Applied Physics, 17(2), 157, 2017
3 The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors
Do JW, Jung HW, Shin MJ, Ahn HK, Kim H, Kim RH, Cho KJ, Chang SJ, Min BG, Yoon HS, Kim JH, Yang JM, Lee JH, Lim JW
Thin Solid Films, 628, 31, 2017
4 Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches
Kim B, Kim SW, Jang H, Kim JH, Koo S, Kim DH, Min BG, Park SJ, Song JS, Ko DH
Journal of Crystal Growth, 401, 308, 2014
5 Preparation, Structure and Properties of Poly(p-phenylene benzobisoxazole) Composite Fibers Reinforced with Graphene
Jeong YG, Baik DH, Jang JW, Min BG, Yoon KH
Macromolecular Research, 22(3), 279, 2014
6 실란 커플링제에 따른 DGEBF 계열 에폭시의 열안정성 및 접착특성 평가
이동수, 이슬이, 민병각, 서영수, 이봉한, 박수진
Polymer(Korea), 38(6), 787, 2014
7 Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate
Ahn HK, Kim ZS, Bae SB, Kim HC, Kang DM, Kim SI, Lee JM, Min BG, Yoon HS, Lim JW, Kwon YH, Nam ES, Park HM, Kim HS, Lee JH
Solid-State Electronics, 95, 42, 2014
8 Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays
Kim B, Kim SW, Jang H, Kim JH, Koo S, Kim DH, Min BG, Ko DH
Thin Solid Films, 557, 55, 2014
9 Solubilization of Chemically Reduced Graphene Oxide Using Coffee Catechol
Lee FM, Jeong G, Lee MY, Kim SY, Park YH, Park SY, Kim SC, Min BG, In I
Chemistry Letters, 42(2), 189, 2013
10 Preparation of stable dispersions of chemically reduced graphene oxide through noncovalent interactions with poly(N-isopropyl acrylamide)-grafted pluronic copolymer
Kim MJ, Kim DW, Yun JS, Lee DH, Oh YJ, Nam JA, Kim SR, Lee JH, Park SY, Min BG, In I
Journal of Materials Science, 48(9), 3357, 2013