| 1 |
Self-accommodation and morphological characteristics of the B33 martensite in Zr-Co-Pd alloys
Matsuda M, Arai K, Mitsuhara M, Yamabe-Mitarai Y, Nishida M
Journal of Materials Science, 56(9), 5899, 2021 |
| 2 |
Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate
Mitsuhara M, Watanabe N, Yokoyama H, Iga R, Shigekawa N
Journal of Crystal Growth, 449, 86, 2016 |
| 3 |
Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)
Kuwano N, Ryu Y, Mitsuhara M, Lin CH, Uchiyama S, Maruyama T, Suzuki Y, Naritsuka S
Journal of Crystal Growth, 401, 409, 2014 |
| 4 |
Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy
Sato T, Mitsuhara M, Iga R, Kanazawa S, Inoue Y
Journal of Crystal Growth, 315(1), 64, 2011 |
| 5 |
Sb surfactant-mediated growth of strained InGaAs multiple-quantum wells by metalorganic vapor phase epitaxy at low growth temperatures
Sato T, Mitsuhara M, Kondo Y
Journal of Crystal Growth, 312(3), 359, 2010 |
| 6 |
Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony
Mitsuhara M, Sato T, Yamamoto N, Fukano H, Kondo Y
Journal of Crystal Growth, 311(14), 3636, 2009 |
| 7 |
Effect of strain in the barrier layer on structural and optical properties of highly strained In0.77Ga0.23As/InGaAs multiple quantum wells
Mitsuhara M, Ogasawara M, Sugiura H
Journal of Crystal Growth, 210(4), 463, 2000 |
