| 1 |
Measurements of size, morphology, and spatial distribution of oxygen precipitates in Si wafers using RIE
Nakashima K, Yoshida T, Mitsushima Y
Journal of the Electrochemical Society, 152(5), G339, 2005 |
| 2 |
Control of shape of silicon needles fabricated by highly selective anisotropic dry etching
Kanechika M, Sugimoto N, Mitsushima Y
Journal of Vacuum Science & Technology B, 20(4), 1298, 2002 |
| 3 |
Study on a condition for forming the high density of silicon needles with high aspect ratio
Kanechika M, Sugimoto N, Mitsushima Y
Journal of Vacuum Science & Technology B, 20(5), 1843, 2002 |
| 4 |
A method to detect oxygen precipitates in silicon wafers by highly selective reactive ion etching
Nakashima K, Watanabe Y, Yoshida T, Mitsushima Y
Journal of the Electrochemical Society, 147(11), 4294, 2000 |
| 5 |
Mechanism of highly preferred (002) texture of Ti films sputter deposited on water-absorbed borophosphosilicate glass films
Yoshida T, Aoki K, Mitsushima Y
Journal of Vacuum Science & Technology B, 17(4), 1585, 1999 |
| 6 |
Effect of H2O partial pressure and temperature during Ti sputtering on texture and electromigration in AlSiCu/Ti/TiN/Ti metallization
Yoshida T, Hashimoto S, Mitsushima Y, Ohwaki T, Taga Y
Journal of Vacuum Science & Technology B, 16(5), 2751, 1998 |
