검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Investigation of basal plane dislocations in the 4H-SiC epilayers grown on {0001} substrates Tsuchida A, Miyanagi T, Kamata I, Nakamura T, Izumi K, Nakayama K, Ishii R, Asano K, Sugawara Y Materials Science Forum, 483, 97, 2005 |
| 2 |
Improvement in electrical performance of Schottky contacts for high-voltage diode Nakamura T, Miyanagi T, Tsuchida H, Kamata I, Jikimoto T, Izumi K Materials Science Forum, 483, 721, 2005 |
| 3 |
8.3 kV 4H-SiC pin diode on (000-1) C-face with small forward voltage degradation Nakayama K, Sugawara Y, Tsuchida H, Miyanagi T, Kamata I, Nakamura T, Asano K, Ishii R Materials Science Forum, 483, 969, 2005 |
| 4 |
Hot-wall CVD growth of 4H-SiC using Si2Cl6+C3H8+H-2 system Miyanagi T, Nishino S Materials Science Forum, 389-3, 199, 2002 |
| 5 |
Homoepitaxial growth of cubic silicon carbide by sublimation epitaxy Furusho T, Miyanagi T, Okui Y, Ohshima S, Nishino S Materials Science Forum, 389-3, 279, 2002 |
| 6 |
Characterization of 2in SiC as-grown bulk by SWBXT at SPring-8 Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S Materials Science Forum, 389-3, 407, 2002 |
| 7 |
Observation of 2in SiC wafer by SWBXT at SPring-8 Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S Materials Science Forum, 389-3, 411, 2002 |
| 8 |
4H-SiC epitaxial growth for high-power devices Tsuchida H, Kamata I, Jikimoto T, Miyanagi T, Izumi K Materials Science Forum, 433-4, 131, 2002 |
| 9 |
Conditions for micropipe dissociation by 4H-SiC CVD growth Kamata I, Tsuchida H, Jikimoto T, Miyanagi T, Izumi K Materials Science Forum, 433-4, 261, 2002 |