검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors Mizubayashi W, Fukuda K, Mori T, Endo K, Liu YX, Matsukawa T, O'uchi S, Ishikawa Y, Migita S, Morita Y, Tanabe A, Tsukada J, Yamauchi H, Masahara M, Ota H Solid-State Electronics, 111, 62, 2015 |
| 2 |
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors Morita Y, Mori T, Migita S, Mizubayashi W, Fukuda K, Matsukawa T, Endo K, O'uchi S, Liu YX, Masahara M, Ota H Solid-State Electronics, 113, 173, 2015 |
| 3 |
Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model Morita Y, Mori T, Migita S, Mizubayashi W, Tanabe A, Fukuda K, Matsukawa T, Endo K, O'uchi S, Liu YX, Masahara M, Ota H Solid-State Electronics, 102, 82, 2014 |
| 4 |
Two-step annealing effects on ultrathin EOT higher-k (k=40) ALD-FifO(2) gate stacks Morita Y, Migita S, Mizubayashi W, Masahara M, Ota H Solid-State Electronics, 84, 58, 2013 |
| 5 |
Metal carbide-induced negative flatband voltage shift in TaCx and HfCx/HfO2 gate stacks Mizubayashi W, Akiyama K, Wang W, Ikeda M, Iwamoto K, Kamimuta Y, Hirano A, Ota H, Nabatame T, Toriumi A Applied Surface Science, 254(19), 6123, 2008 |
| 6 |
Highly reliable high-k gate dielectrics with gradual Hf-profile in the HfO2/SiO2 interface region Iwamoto K, Mizubayashi W, Ogawa A, Nabatame T, Satake H, Toriumi A Solid-State Electronics, 50(6), 999, 2006 |