검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Process Engineering Study of the Homogenously Catalyzed Biodiesel Synthesis in a Bubble Column Reactor Mollenhauer T, Klemm W, Lauterbach M, Ondruschka B, Haupt J Industrial & Engineering Chemistry Research, 49(24), 12390, 2010 |
| 2 |
Leakage current mechanisms in epitaxial Gd2O3 high-k gate dielectrics Gottlob HDB, Echtermeyer TJ, Schmidt M, Mollenhauer T, Wahlbrink T, Lemme MC, Kurz H Electrochemical and Solid State Letters, 11(3), G12, 2008 |
| 3 |
Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes Echtermeyer T, Gottlob HDB, Wahlbrink T, Mollenhauer T, Schmidt M, Efavi JK, Lemme MC, Kurz H Solid-State Electronics, 51(4), 617, 2007 |
| 4 |
Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics Gottlob HDB, Mollenhauer T, Wahlbrink T, Schmidt M, Echtermeyer T, Efavi JK, Lemme MC, Kurz H Journal of Vacuum Science & Technology B, 24(2), 710, 2006 |
| 5 |
Nanowire fin field effect transistors via UV-based nanoimprint lithography Fuchs A, Bender M, Plachetka U, Kock L, Wahlbrink T, Gottlob HDB, Efavi JK, Moeller M, Schmidt M, Mollenhauer T, Moormann C, Lemme MC, Kurz H Journal of Vacuum Science & Technology B, 24(6), 2964, 2006 |
| 6 |
CMOS integration of epitaxial Gd2O3 high-k gate dielectrics Gottlob HDB, Echtermeyer T, Mollenhauer T, Efavi JK, Schmidt M, Wahlbrink T, Lemme MC, Kurz H, Czernohorsky M, Bugiel E, Osten HJ, Fissel A Solid-State Electronics, 50(6), 979, 2006 |
| 7 |
Subthreshold behavior of triple-gate MOSFETs on SOI material Lemme MC, Mollenhauer T, Henschel W, Wahlbrink T, Baus M, Winkler O, Granzner R, Schwierz F, Spangenberg B, Kurz H Solid-State Electronics, 48(4), 529, 2004 |
| 8 |
Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates Henschel W, Wahlbrink T, Georgiev YM, Lemme M, Mollenhauer T, Vratzov B, Fuchs A, Kurz H, Kittler M, Schwierz F Solid-State Electronics, 48(5), 739, 2004 |
| 9 |
Fabrication of 12 nm electrically variable shallow junction metal-oxide-semiconductor field effect transistors on silicon on insulator substrates Henschel W, Wahlbrink T, Geogriev YM, Lemme M, Mollenhauer T, Vratzov B, Fuchs A, Kurz H Journal of Vacuum Science & Technology B, 21(6), 2975, 2003 |