검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation Xiao YP, Motooka T, Teranishi R, Munetoh S Journal of Crystal Growth, 362, 103, 2013 |
| 2 |
Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study Ujihara T, Munetoh S, Kusunoki K, Kamei K, Usami N, Fujiwara K, Sazaki G, Nakajima K Thin Solid Films, 476(1), 206, 2005 |
| 3 |
Solution growth of self-standing 6H-SiC single crystal using metal solvent Kusunoki K, Munetoh S, Kamei K, Hasebe M, Ujihara T, Nakajima K Materials Science Forum, 457-460, 123, 2004 |
| 4 |
TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent Kamei K, Kusunoki K, Munetoh S, Ujihara T, Nakajima K Materials Science Forum, 457-460, 347, 2004 |
| 5 |
Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy Ujihara T, Munetoh S, Kusunoki K, Kamei K, Usami N, Fujiwara K, Sazaki G, Nakajima K Materials Science Forum, 457-460, 633, 2004 |
| 6 |
Uniaxial strain observed in solid/liquid interface during crystal growth from melted Si: a molecular dynamics study Nishihira K, Munetoh S, Motooka T Journal of Crystal Growth, 210(1-3), 60, 2000 |