화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
Dubrovskii VG, Cirlin GE, Musikhin YG, Samsonenko YB, Tonkikh AA, Polyakov NK, Egorov VA, Tsatsul'nikov AF, Krizhanovskaya NA, Ustinov VM, Werner P
Journal of Crystal Growth, 267(1-2), 47, 2004
2 InAs/InGaAsN quantum dots emitting at 1.55 mu m grown by molecular beam epitaxy
Ustinov VM, Egorov AY, Odnoblyudov VA, Kryzhanovskaya NV, Musikhin YG, Tsatsul'nikov AF, Alferov ZI
Journal of Crystal Growth, 251(1-4), 388, 2003
3 Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs
Egorov VA, Polyakov NK, Tonkikh AA, Petrov VN, Cirlin GE, Volovik BV, Zhukov AE, Musikhin YG, Cherkashin NA, Ustinov VM
Applied Surface Science, 175, 243, 2001
4 1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
Ustinov VM, Zhukov AE, Maleev NA, Kovsh AR, Mikhrin SS, Volovik BV, Musikhin YG, Shernyakov YM, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D
Journal of Crystal Growth, 227, 1155, 2001