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| No. | Article |
|---|---|
| 1 |
Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region Cortes I, Toulon G, Morancho F, Flores D, Hugonnard-Bruyere E, Villard B Solid-State Electronics, 70, 8, 2012 |