| 1 |
Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure in different gas atmospheres
Beichele M, Bauer AJ, Herden M, Ryssel H
Solid-State Electronics, 45(8), 1383, 2001 |
| 2 |
Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked "N-O-N" gate dielectrics
Niimi H, Lucovsky G
Journal of Vacuum Science & Technology B, 17(6), 2610, 1999 |
| 3 |
Thermal Nitridation of SiO2-Films in Ammonia - The Role of Hydrogen
Baumvol IJ, Stedile FC, Ganem JJ, Trimaille I, Rigo S
Journal of the Electrochemical Society, 143(4), 1426, 1996 |
| 4 |
Nitrogen-Atom Incorporation at Si-SiO2 Interfaces by a Low-Temperature (300-Degrees-C), Pre-Deposition, Remote-Plasma Oxidation Using N2O
Lee DR, Lucovsky G
Journal of Vacuum Science & Technology A, 13(3), 1671, 1995 |
| 5 |
Thin Thermal SiO2 After NH3 or N2O Plasma Action Under Plasma-Enhanced Chemical-Vapor-Deposition Conditions
Dimitrova T, Atanassova E, Beshkov G, Pazov J
Thin Solid Films, 252(2), 89, 1994 |
