| 1 |
Carrier mobility determination with a two-terminal'gridded' capacitor
Barthol CJ, White MH
Solid-State Electronics, 101, 122, 2014 |
| 2 |
Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices
Mroczynski R, Taube A, Gieraltowska S, Guziewicz E, Godlewski M
Applied Surface Science, 258(21), 8366, 2012 |
| 3 |
A comprehensive analysis on scaling prospects of dual-bit channel engineered SONOS NOR-flash EEPROM cells
Datta A, Mahapatra S
Solid-State Electronics, 54(4), 397, 2010 |
| 4 |
Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices
Wang G, White MH
Solid-State Electronics, 52(10), 1491, 2008 |
| 5 |
A low voltage SANOS nonvolatile semiconductor memory (NVSM) device
Zhao YJ, Wang XN, Shang HL, White MH
Solid-State Electronics, 50(9-10), 1667, 2006 |
| 6 |
An analytical retention model for SONOS nonvolatile memory devices in the excess electron state
Wang Y, White MH
Solid-State Electronics, 49(1), 97, 2005 |
| 7 |
A novel SONOS nonvolatile flash memory device using substrate hot-hole injection for write and gate tunneling for erase
Wang Y, Zhao Y, Khan BM, Doherty CL, Krayer JD, White MH
Solid-State Electronics, 48(10-11), 2031, 2004 |
