| 1 |
Structural and electrical properties of Ni-Cr oxide films prepared by magnetron sputtering
Saito N, Nakaaki I, Iwata H, Nishioka K
Thin Solid Films, 520(7), 3031, 2012 |
| 2 |
Optical and electrical properties of undoped and oxygen-doped a-GeC : H films prepared by magnetron sputtering
Saito N, Nakaaki I, Iwata H, Yamaguchi T
Thin Solid Films, 515(7-8), 3766, 2007 |
| 3 |
Optical, electrical and structural properties of amorphous SiCN : H films prepared by rf glow-discharge decomposition
Nakaaki I, Saito N
Applied Surface Science, 169, 468, 2001 |
| 4 |
Properties of amorphous ternary alloy films a-SixCyGez : H prepared by magnetron co-sputtering
Saito N, Nakaaki I, Nakamura S, Yoshioka S, Yamaguchi T
Applied Surface Science, 169, 472, 2001 |
| 5 |
Adhesion strength of plasma-assisted CVD B(C,N) film to silicon substrate
Nakamura S, Saito N, Yoshioka S, Nakaaki I, Suzaki Y
Journal of Adhesion Science and Technology, 13(5), 615, 1999 |
| 6 |
Indium doping of amorphous SiC : H films prepared by reactive magnetron co-sputtering
Saito N, Inui Y, Yamaguchi T, Nakaaki I
Thin Solid Films, 353(1-2), 189, 1999 |
| 7 |
The Effects of Tl Impurities on the Properties of Amorphous SiC-H Films Prepared by Cosputtering
Saito N, Inui Y, Yamaguchi T, Nakaaki I
Thin Solid Films, 281-282, 302, 1996 |
| 8 |
Electrical, Optical and Structural-Properties of A-Singe-H Films Prepared by the RF Glow-Discharged Decomposition
Nakaaki I, Saito N
Thin Solid Films, 281-282, 308, 1996 |
| 9 |
Influence of Deposition Conditions on the Properties of A-Gec-H and A-Ge-H Films Prepared by RF Magnetron Sputtering
Saito N, Nakaaki I, Yamaguchi T, Yoshioka S, Nakamura S
Thin Solid Films, 269(1-2), 69, 1995 |
