| 1 |
Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition
Kwak T, Lee J, So B, Choi U, Nam O
Journal of Crystal Growth, 510, 50, 2019 |
| 2 |
Effect on optical, structural and electrical properties by the AlGaN/AlGaN multi quantum wells with different well and barrier thicknesses
Kim T, So B, Lee J, Nam O
Thin Solid Films, 680, 31, 2019 |
| 3 |
Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition
Choi U, Lee K, Han J, Jang T, Nam Y, So B, Kwak T, Nam O
Thin Solid Films, 675, 148, 2019 |
| 4 |
Self-assembled growth of inclined GaN nanorods on (10-10) m-plane sapphire using metal-organic chemical vapor deposition
Chae S, Lee K, Jang J, Min D, Kim J, Nam O
Journal of Crystal Growth, 409, 65, 2015 |
| 5 |
High-quality a-plane (11-20) GaN growth using double-lens structure on r-plane sapphire
Min D, Yoo G, Moon S, Kwak J, Kim H, Nam O
Journal of Crystal Growth, 387, 86, 2014 |
| 6 |
Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy
Woo S, Kim M, So B, Yoo G, Jang J, Lee K, Nam O
Journal of Crystal Growth, 407, 6, 2014 |
| 7 |
Defect reduction in (11-22) semipolar GaN with embedded InN islands on m-plane sapphire
Jung C, Jang J, Hwang J, Jeong J, Kim J, Lee K, Nam O
Journal of Crystal Growth, 370, 26, 2013 |
| 8 |
Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer
Jeong J, Jang J, Hwang J, Jung C, Kim J, Lee K, Lim H, Nam O
Journal of Crystal Growth, 370, 114, 2013 |
| 9 |
Nonpolar a-GaN epilayers with reduced defect density using patterned r-plane sapphire substrates
Kong BH, Jung BO, Cho HK, Yoo G, Nam O
Thin Solid Films, 544, 244, 2013 |
| 10 |
Improvement of crystal quality and optical property in (11-22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate
Jang J, Lee K, Hwang J, Jung J, Lee S, Lee K, Kong B, Cho H, Nam O
Journal of Crystal Growth, 361, 166, 2012 |
