화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Comparison of dual-k spacer and single-k spacer for single NWFET and 3-stack NWFET
Ko H, Kim J, Kim M, Kang M, Shin H
Solid-State Electronics, 140, 64, 2018
2 Photoconduction mechanism of ultra-long indium oxide nanowires
Mazouchi M, Sarkar K, Purahmad M, Farid S, Dutta M
Solid-State Electronics, 148, 58, 2018
3 Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
Elmessary MA, Nagy D, Aldegunde M, Seoane N, Indalecio G, Lindberg J, Dettmer W, Peric D, Garcia-Loureiro AJ, Kalna K
Solid-State Electronics, 128, 17, 2017
4 I-on/I-off ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2
Jang K, Saraya T, Kobayashi M, Hiramoto T
Solid-State Electronics, 136, 60, 2017
5 Reconfigurable nanowire electronics - A review
Weber WM, Heinzig A, Trommer J, Martin D, Grube M, Mikolajick T
Solid-State Electronics, 102, 12, 2014
6 전계효과트랜지스터의 생명공학 응용
손영수
Applied Chemistry for Engineering, 24(1), 1, 2013
7 Self-aligned multi-channel silicon nanowire field-effect transistors
Zhu H, Li QL, Yuan H, Baumgart H, Ioannou DE, Richter CA
Solid-State Electronics, 78, 92, 2012
8 무전해 식각법으로 합성한 Si 나노와이어 Field Effect Transistor
이상훈, 문경주, 황성환, 이태일, 명재민
Korean Journal of Materials Research, 21(2), 115, 2011
9 Epitaxial ZnS/Si core-shell nanowires and single-crystal silicon tube field-effect transistors
Chen ZH, Tang H, Fan X, Je JS, Lee CS, Lee ST
Journal of Crystal Growth, 310(1), 165, 2008