| 1 |
Edge transistor elimination in oxide trench isolated N-channel metal-oxide-semiconductor field effect transistors
Yang JN, Denton JP, Neudeck GW
Journal of Vacuum Science & Technology B, 19(2), 327, 2001 |
| 2 |
Nitrided thermal SiO2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor
Ahmed SS, Denton JP, Neudeck GW
Journal of Vacuum Science & Technology B, 19(3), 800, 2001 |
| 3 |
Silicon-on-insulator processes for the fabrication of novel nanostructures
Bourland S, Denton J, Ikram A, Neudeck GW, Bashir R
Journal of Vacuum Science & Technology B, 19(5), 1995, 2001 |
| 4 |
Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration
Bashir R, Su T, Sherman JM, Neudeck GW, Denton J, Obeidat A
Journal of Vacuum Science & Technology B, 18(2), 695, 2000 |
| 5 |
Multiple layers of silicon-on-insulator for nanostructure devices
Neudeck GW, Pae SW, Denton JP, Su T
Journal of Vacuum Science & Technology B, 17(3), 994, 1999 |
| 6 |
Process Improvements in the Selective Epitaxial-Growth of Si1-xGex/Si Strained Layers in a Conventional Hot-Wall LPCVD System
Lee IM, Takoudis CG, Wang WC, Denton JP, Neudeck GW, Koh MT, Kvam EP
Journal of the Electrochemical Society, 144(3), 1095, 1997 |
| 7 |
Selective Epitaxial-Growth of Si1-xGex/Si Strained-Layers in a Tubular Hot-Wall Low-Pressure Chemical-Vapor-Deposition System
Wang WC, Denton JP, Neudeck GW, Lee IM, Takoudis CG, Koh MT, Kvam EP
Journal of Vacuum Science & Technology B, 15(1), 138, 1997 |
| 8 |
Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor
Kongetira P, Neudeck GW, Takoudis CG
Journal of Vacuum Science & Technology B, 15(6), 1902, 1997 |
| 9 |
Kinetics and Modeling of Low-Pressure Chemical-Vapor-Deposition of Si1-xGex Epitaxial Thin-Films
Lee IM, Wang WC, Neudeck GW, Takoudis CG
Chemical Engineering Science, 51(11), 2681, 1996 |
| 10 |
Process-Property Relationships Between Silicon Selective Epitaxial-Growth Ambients and Degradation of Insulators
Gaynor W, Takoudis CG, Neudeck GW
Journal of Vacuum Science & Technology A, 14(6), 3224, 1996 |
