화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Photon emission mechanisms in 6H and 4H-SiC MOSFETs
Banc C, Bano E, Ouisse T, Scharnholz S, Schmid U, Wondrak W, Niemann E
Materials Science Forum, 338-3, 695, 2000
2 Hall scattering factor and electron mobility of 4H SiC: Measurements and numerical simulation
Rutsch G, Devaty RP, Choyke WJ, Langer DW, Rowland LB, Niemann E, Wischmeyer F
Materials Science Forum, 338-3, 733, 2000
3 SiC-power rectifiers
Held R, Fullmann M, Niemann E
Materials Science Forum, 338-3, 1407, 2000