화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 GaN films deposited at low temperature on (111)Si by compound-source molecular beam epitaxy technique
Honda T, Aoki Y, Akiyama M, Obinata N, Egawa S, Kawanishi H
Journal of Vacuum Science & Technology B, 23(4), 1795, 2005
2 Low-temperature growth of GaN layers on (0001)6H-SiC by compound source molecular beam epitaxy
Honda T, Hama M, Aoki Y, Akiyama M, Obinata N, Kawanishi H
Journal of Vacuum Science & Technology B, 22(4), 2155, 2004