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| No. | Article |
|---|---|
| 1 |
Si doped p- and n-type AlxGa1-xAs epilayers for high density lateral-junction LED arrays on (311)A patterned substrate Saravanan S, Dharmarasu N, Vaccaro PO, Ocampo JMZ, Kubota K, Saito N Solid-State Electronics, 48(10-11), 1791, 2004 |