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Enhanced field effect passivation of c-Si surface via introduction of trap centers: Case of hafnium and aluminium oxide bilayer films deposited by thermal ALD Panigrahi J, Vandana, Singh R, Singh PK Solar Energy Materials and Solar Cells, 188, 219, 2018 |
2 |
Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior Baek S, Lee J, Park I, Baek RH, Lee JS Solid-State Electronics, 140, 18, 2018 |
3 |
Characterization of interface defects in ALD Al2O3/p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz Gu SY, Min J, Taur Y, Asbeck PM Solid-State Electronics, 118, 18, 2016 |
4 |
Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs Koyama M, Casse M, Barraud S, Ghibaudo G, Iwai H, Faynot O, Rehnbold G Solid-State Electronics, 108, 36, 2015 |
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Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors Celik-Butler Z, Mahmud MI, Hao P, Hou F, Amey BL, Pendharkar S Solid-State Electronics, 111, 141, 2015 |
6 |
Dependence on an oxide trap's location of random telegraph noise (RTN) in GIDL current of n-MOSFET Gia QN, Yoo SW, Lee H, Shin H Solid-State Electronics, 92, 20, 2014 |
7 |
Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric Tsui BY, Su TT, Shew BY, Huang YT Solid-State Electronics, 81, 119, 2013 |
8 |
Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique Valenza M, Husseini JE, Martinez F, Bawedin M, Le Royer C, Damlencourt JF Solid-State Electronics, 70, 27, 2012 |
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Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides Contaret T, Touati B, Ghibaudo G, Boeuf F, Skotnicki T Solid-State Electronics, 51(4), 633, 2007 |
10 |
A thorough study of hydrogen-related gate oxide degradation in deep submicron MOSFET's with deuterium treatment process Lee JS, Lee YH, Hess K Solid-State Electronics, 50(2), 149, 2006 |