검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Experimental and theoretical study of silicon-doped Sb2Te3 thin films: Structure and phase stability Li XL, Rao F, Song ZT, Ren K, Liu WL, Sun ZM Applied Surface Science, 257(10), 4566, 2011 |
| 2 |
Considerable changes in crystallization process delivered by N doping in Te-free, Sb-rich GeSb binary alloy Kim HK, Kim NH, Roh JS, Choi DJ Current Applied Physics, 11(3), S404, 2011 |
| 3 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |
| 4 |
Crystallization behavior caused by N doping in Ge1Sb4Te7 for PCRAM application Kim HK, Roh JS, Choi DJ Thin Solid Films, 518(22), 6422, 2010 |
| 5 |
Crystallization kinetics of Ga-Sb-Te films for phase change memory Cheng HY, Kao KF, Lee CM, Chin TS Thin Solid Films, 516(16), 5513, 2008 |
| 6 |
A heating and diffusion barrier based on TaSiNx for miniaturized IC devices Cheng HY, Chen YC, Lee CM, Wang SH, Chin TS Thin Solid Films, 515(3), 990, 2006 |