검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions Wellmann PJ, Straubinger TL, Desperrier P, Muller R, Kunecke U, Sakwe SA, Schmitt H, Winnacker A, Blanquet E, Dedulle JM, Pons M Materials Science Forum, 483, 25, 2005 |
| 2 |
Large diameter 4H-SiC substrates for commercial power applications Powell AR, Leonard RT, Brady MF, Muller SG, Tsvetkov VF, Trussell R, Sumakeris JJ, Hobgood HM, Burk AA, Glass RC, Carter CH Materials Science Forum, 457-460, 41, 2004 |
| 3 |
Study of polytype switching vs. micropipes in PVT grown SiC single crystals Wang S, Sanchez E, Kopec A, Zhang M, Hernandez O Materials Science Forum, 457-460, 51, 2004 |
| 4 |
Analysis of sub-surface damage-induced threading dislocations in physical vapor transport growth of 6H-SiC Liu JQ, Sanchez EK, Skowronski M Materials Science Forum, 389-3, 415, 2002 |
| 5 |
PVT growth of p-type and semi-insulating 2-inch 6H-SiC crystals Rasp M, Straubinger TL, Schmitt E, Bickermann M, Reshanov S, Sadowski H Materials Science Forum, 433-4, 55, 2002 |
| 6 |
Growth of silicon carbide: process-related defects Yakimova R, Syvajarvi M, Iakimov T, Jacobsson H, Kakanakova-Georgieva A, Raback P, Janzen E Applied Surface Science, 184(1-4), 27, 2001 |
| 7 |
Stability criteria for 4H-SiC bulk growth Straubinger TL, Bickermann M, Hofmann D, Weingartner R, Wellmann PJ, Winnacker A Materials Science Forum, 353-356, 25, 2001 |
| 8 |
Some aspects of sublimation growth of SiC ingots Avramenko SF, Kiselev VS, Valakh MY, Yukhimchuk VA Materials Science Forum, 353-356, 41, 2001 |
| 9 |
Growth of ZnSe single crystals Fang CS, Gu QT, Wei JQ, Pan QW, Shi W, Wang JY Journal of Crystal Growth, 209(2-3), 542, 2000 |
| 10 |
Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid Bahng W, Kitou Y, Nishizawa S, Yamaguchi H, Khan MN, Oyanagi N, Arai K, Nishino S Materials Science Forum, 338-3, 103, 2000 |