검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
4H-SiC DMOSFETs for high speed switching applications Ryu SH, Krishnaswami S, Das M, Richmond J, Agarwal A, Palmour J, Scofield J Materials Science Forum, 483, 797, 2005 |
| 2 |
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones KA, Scozzie C Materials Science Forum, 483, 901, 2005 |
| 3 |
SiCBJT technology for power switching and RF applications Agarwal A, Ryu SH, Capell C, Richmond J, Palmour J, Bartlow H, Chow P, Scozzie S, Tipton W, Baynes T, Jones K Materials Science Forum, 457-460, 1141, 2004 |
| 4 |
Development of 10 kV 4H-SiC power DMOSFETs Ryu SH, Agarwal A, Krishnaswami S, Richmond J, Palmour J Materials Science Forum, 457-460, 1385, 2004 |
| 5 |
High quality SiC substrates for semiconductor devices: From research to industrial production Muller SG, Brady MF, Brixius WH, Fechko G, Glass RC, Henshall D, Hobgood HM, Jenny JR, Leonard R, Malta D, Powell A, Tsvetkov VF, Allen S, Palmour J, Carter CH Materials Science Forum, 389-3, 23, 2002 |
| 6 |
Large-area (3.3 mm x 3.3 mm) power MOSFETs in 4H-SiC Ryu SH, Agarwal A, Richmond J, Das M, Lipkin L, Palmour J, Saks N, Williams J Materials Science Forum, 389-3, 1195, 2002 |
| 7 |
5.0 kV 4H-SiC SEMOSFET with low RonS of 88 m Omega cm(2) Sugawara Y, Asano K, Takayama D, Ryu S, Singh R, Palmour J, Hayashi T Materials Science Forum, 389-3, 1199, 2002 |