검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model Trojman L, Ragnarsson LA, Collaert N Solid-State Electronics, 154, 24, 2019 |
| 2 |
Submillimeter wave GaAs Schottky diode application based study and optimization for 0.1-1.5 THz Jenabi S, Malekabadi A, Deslandes D, Boone F, Charlebois SA Solid-State Electronics, 134, 65, 2017 |
| 3 |
Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance Ko H, Kim J, Kang M, Shin H Solid-State Electronics, 136, 68, 2017 |
| 4 |
Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure Wang W, Yu XX, Zhou JJ, Chen DJ, Zhang K, Kong C, Lu HY, Kong YC, Li ZH, Chen TS Solid-State Electronics, 126, 32, 2016 |
| 5 |
Capacitance estimation for In As Tunnel FETs by means of full-quantum k . p simulation Gnani E, Baravelli E, Gnudi A, Reggiani S, Baccarani G Solid-State Electronics, 108, 104, 2015 |
| 6 |
A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel Wang M, Ke DM, Xu CX, Wang BT Solid-State Electronics, 92, 35, 2014 |
| 7 |
Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes Niebojewski H, Le Royer C, Morand Y, Rozeau O, Jaud MA, Dubois E, Poiroux T, Bensahel D Solid-State Electronics, 97, 45, 2014 |
| 8 |
Parasitic capacitance removal of sub-100 nm p-MOSFETs using capacitance-voltage measurements Steinke DR, Piccirillo J, Gausepohl SC, Vivekand S, Rodgers MP, Lee JU Solid-State Electronics, 68, 51, 2012 |
| 9 |
Anisotropic high-k deposition for gate-last processing of metal-oxide-semiconductor field-effect transistor utilizing electron-cyclotron-resonance plasma sputtering Kikuchi Y, Gao J, Sano T, Ohmi S Thin Solid Films, 520(7), 2989, 2012 |
| 10 |
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession Chiarella T, Witters L, Mercha A, Kerner C, Rakowski M, Ortolland C, Ragnarsson LA, Parvais B, De Keersgieter A, Kubicek S, Redolfi A, Vrancken C, Brus S, Lauwers A, Absil P, Biesemans S, Hoffmann T Solid-State Electronics, 54(9), 855, 2010 |