화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Effect of process parameters on via formation in Si using deep reactive ion etching
Abhulimen IU, Polamreddy S, Burkett S, Cai L, Schaper L
Journal of Vacuum Science & Technology B, 25(6), 1762, 2007
2 Copper electroplating to fill blind vias for three-dimensional integration
Spiesshoefer S, Patel J, Lam T, Cai L, Polamreddy S, Figueroa RF, Burkett SL, Schaper L, Geil R, Rogers B
Journal of Vacuum Science & Technology A, 24(4), 1277, 2006
3 Process integration for through-silicon vias
Spiesshoefer S, Rahman Z, Vangara G, Polamreddy S, Burkett S, Schaper L
Journal of Vacuum Science & Technology A, 23(4), 824, 2005