검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Growth of 3-inch diameter 6H-SiC single crystals by sublimation physical vapor transport Wang S, Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Balkas CM, Timmerman AG Materials Science Forum, 389-3, 35, 2002 |
| 2 |
The nucleation of polytype inclusions during the sublimation growth of 6H and 4H silicon carbide Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Wang S, Timmerman A Materials Science Forum, 389-3, 71, 2002 |