검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Development of processing strategies for multigraded selective laser melting of Ti6Al4V and IN718 Scaramuccia MG, Demir AG, Caprio L, Tassa O, Previtali B Powder Technology, 367, 376, 2020 |
| 2 |
Laser surface texturing of beta-Ti alloy for orthopaedics: Effect of different wavelengths and pulse durations Menci G, Demir AG, Waugh DG, Lawrence J, Previtali B Applied Surface Science, 489, 175, 2019 |
| 3 |
Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges Khazaka R, Bogumilowicz Y, Rouchon D, Boutry H, Chalupa Z, Lapras V, Previtali B, Chevalier N, Papon AM, David S, Maitrejean S Applied Surface Science, 445, 77, 2018 |
| 4 |
Laser micropolishing of AISI 304 stainless steel surfaces for cleanability and bacteria removal capability De Giorgi C, Furlan V, Demir AG, Tallarita E, Candiani G, Previtali B Applied Surface Science, 406, 199, 2017 |
| 5 |
Sub-micrometric surface texturing of AZ31 Mg-alloy through two-beam direct laser interference patterning with a ns-pulsed green fiber laser Furlan V, Biondi M, Demir AG, Pariani G, Previtali B, Bianco A Applied Surface Science, 423, 619, 2017 |
| 6 |
Effect of Surface Texture on the Adhesion Performance of Laser Treated Ti6Al4V Alloy Maressa P, Anodio L, Bernasconi A, Demir AG, Previtali B Journal of Adhesion, 91(7), 518, 2015 |
| 7 |
FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration Fenouillet-Beranger C, Previtali B, Batude P, Nemouchi F, Casse M, Garros X, Tosti L, Rambal N, Lafond D, Dansas H, Pasini L, Brunet L, Deprat F, Gregoire M, Mellier M, Vinet M Solid-State Electronics, 113, 2, 2015 |
| 8 |
Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains Hartmann JM, Benevent V, Barnes JP, Veillerot M, Lafond D, Damlencourt JF, Morvan S, Previtali B, Andrieu F, Loubet N, Dutartre D Solid-State Electronics, 83, 10, 2013 |
| 9 |
Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: to Single Electron Transistor Deshpande V, Barraud S, Jehl X, Wacquez R, Vinet M, Coquand R, Roche B, Voisin B, Triozon F, Vizioz C, Tosti L, Previtali B, Perreau P, Poiroux T, Sanquer M, Faynot O Solid-State Electronics, 84, 179, 2013 |
| 10 |
Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs Sklenard B, Batude P, Rafhay Q, Martin-Bragado I, Xu CQ, Previtali B, Colombeau B, Khaja FA, Cristoloveanu S, Rivallin P, Tavernier C, Poiroux T Solid-State Electronics, 88, 9, 2013 |