검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Hydrogen-induced program threshold voltage degradation analysis in SONOS wafer Lin Q, Zhao C, Sheng N Solid-State Electronics, 116, 60, 2016 |
| 2 |
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories Paolucci GM, Bertuccio M, Compagnoni CM, Beltrami S, Spinelli AS, Lacaita AL, Visconti A Solid-State Electronics, 113, 138, 2015 |
| 3 |
LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb Cai YM, Huang R, Shan XN, Zhou FL, Li Y, Wang YY Solid-State Electronics, 50(2), 276, 2006 |
| 4 |
Modelling and simulation of charging and discharging processes in nanocrystal flash memories during program and erase operations Campera A, Iannaccone G Solid-State Electronics, 49(11), 1745, 2005 |