| 1 |
Vacancy-like defects in doped Pb(Zr(60)Ti(40))O(3) observed by positron lifetime and coincident Doppler spectroscopy
Puff W, Kungl H, Hoffmann MJ, Gottschalk S, Balogh AG
Materials Science Forum, 445-6, 171, 2004 |
| 2 |
Vacancy-type defects in proton-irradiated InAs
Puff W, Balogh AG
Materials Science Forum, 363-3, 73, 2001 |
| 3 |
Characterization of radiation-induced defects in ZnO probed by positron annihilation spectroscopy
Brunner S, Puff W, Balogh AG, Mascher P
Materials Science Forum, 363-3, 141, 2001 |
| 4 |
A study of vacancy-like defects in the chalcopyrite semiconductor AgInSe2
Al-Kotb MS, Puff W, Hassan SA, Mohsen M
Materials Science Forum, 363-3, 150, 2001 |
| 5 |
Microstructural evolution of radiation-induced defects in semi-insulating SiC during isochronal annealing
Puff W, Balogh AG, Mascher P
Materials Science Forum, 338-3, 965, 2000 |
| 6 |
Vacancy-type detects in proton-irradiated 6H-and 4H-SiC: A systematic study with positron annihilation techniques
Puff W, Balogh AG, Mascher P
Materials Science Forum, 338-3, 969, 2000 |
| 7 |
The Influence of Processing Conditions on Point-Defects and Luminescence-Centers in ZnO
Zhong J, Kitai AH, Mascher P, Puff W
Journal of the Electrochemical Society, 140(12), 3644, 1993 |
