화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Modeling effects of interface traps on the gate C-V characteristics of MOS devices on alternative high-mobility substrates
Satter MM, Haque A
Solid-State Electronics, 54(6), 621, 2010
2 Compact model of short-channel MOSFETs considering quantum mechanical effects
Jayadeva GS, DasGupta A
Solid-State Electronics, 53(6), 649, 2009
3 Computationally efficient method for scattering device simulation in nanoscale MOSFETs
Iwata H, Matsuda T, Ohzone T
Solid-State Electronics, 51(5), 708, 2007